Specification of thin film SOI wafers

Parameter

Unit

Specification

150 mm

200 mm

SOI layer

Edge exclusion

< 5

Silicon layer thickness

200 - 1000

90 - 1000

Uniformity

± 20

± 12

Type of conductivity

Р-type / (B)

Resistivity

Ohm·cm

As agreed with the customer

Orientation

<100>

Non-bonding areas >0,5 mm in diameter

pcs.

Surface roughness in the area of 2х2 μm

< 0,5

< 0,3

Metal contamination Fe, Cu , Cr , Ni, Zn, Na, Ca , K, Al (for each element separately)

at./cm²

5·10¹⁰

Light scattering defects >0,2 μm

pcs.

< 50

< 65

HF-defects

at./cm²

< 0,5

< 0,3

Buried oxide

Oxide thickness

100 – 2000

Uniformity

< 5

Silicon substrate

Type of conductivity

Р-type / (B)

Resistivity

Ohm·cm

As agreed with the customer

Orientation

<100>

Flat size

57,5 ± 2,5

notch

Flat orientation

<110>

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