| Parameter | Unit | Specification |
| Silicon layer thickness | μm | 4 – 100 |
| Uniformity of silicon layer | μm | ± 1,0 |
| Surface roughness in the area of 2х2 μm | nm | < 0,5 |
| Buried oxide thickness | µm | < 2,0 |
| Uniformity of buried oxide layer | % | < 5 |
| Total thickness variation (TTV) | µm | < 5 |
| BOW | µm | < 40 |
| WARP | µm | < 40 |
| Type of conductivity | P, N | |
| Orientation of silicon layer and substrate | <100> | |
| Flat size | mm | 57,5 ± 2,5 |