Specification of thick film SOI wafers

Parameter Unit Specification
Silicon layer thickness μm 4 – 100
Uniformity of silicon layer μm ± 1,0
Surface roughness in the area of 2х2 μm nm < 0,5
Buried oxide thickness µm < 2,0
Uniformity of buried oxide layer % < 5
Total thickness variation (TTV) µm < 5
BOW µm < 40
WARP µm < 40
Type of conductivity P, N
Orientation of silicon layer and substrate <100>
Flat size mm 57,5 ± 2,5
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