SOI wafer production

150, 200 mm
Wafer diameter

10 wafers
Minimal batch

Fast order execution

Silicon on insulator (SOI) wafer production and supply (diameter 150 mm and 200 mm)

Manufacturing of SOI wafers is carried out with use of modern automated technological equipment providing high quality of final products. Monitoring of SOI structures parameters is performed at all stages of production cycle and final acceptance

Thin Film SOI wafers for VLSI and Silicon Photonics Aplications
Wafer diameter: 150 mm, 200 mm
Silicon layer thickness: 90 - 1000 nm
Oxide thickness: 100 - 2000 nm
Surface roughness in the area of 2x2 μm: < 0,5 nm
Technology: bonding of wafers and splitting by ion cut
Minimal batch: 10 wafers
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Thick film SOI wafers for MEMS and power electronics products manufacturing
Wafer diameter: 150 mm, 200 mm
Silicon layer thickness: 4 - 100 nm
Oxide thickness: up to 2 μm
Surface roughness in the area of 2x2 μm: < 0,5 nm
Technology: bonding of waOxide thickness fers, grinding and polishing of donor wafer
Minimal batch: 10 wafers
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Related Services

Silicon wafers thinning by
grinding

  • Thinning of wafers with topology on the tape;
  • Wafer diameter: 100 mm, 150 mm, 200 mm;
  • Minimum wafer thickness after thinning: 130 µm, 150 µm, 200 µm;
  • Total thickness variation (TTV): < 3,0 µm;
  • Thickness variation (from wafer to wafer): < 3,0 µm

Grinding to improve the geometry of
silicon wafers

  • Wafer diameter: 100 mm, 150 mm;
  • Total thickness variation (TTV): < 1,0 µm (100 mm); < 1,5 µm (150 mm);
  • Thickness variation (from wafer to wafer): < 3,0 µm

Silicon wafers edge trimming

  • Prevention of chips during grinding process;
  • Wafer diameter: 150 mm, 200 mm;
  • Bevel width up to 5 mm;
  • Bevel depth is determined by the thickness of the wafer after thinning

Measurement of silicon, saphire,
SOI and SOS wafers

  • Measurement of wafer geometry (BOW, WARP, thickness, flatness) by laser interferometry with an accuracy up to 0.1 µm;
  • Micro-roughness measurement by atomic force microscopy with resolution up to 0.05 nm;
  • Measurement of thicknesses of multilayer thin-film structures and optical characteristics (reflection, refraction and absorption coefficients) of semiconductor wafers by the method of spectral ellipsometry in the range of 1Å – 100 µm

Silicon wafers oxidation

  • Diameter of oxidized SOI wafers: 150 mm, 200 mm;
  • Silica thickness: 50 - 2000 nm;
  • Thickness uniformity: ± 2.5%;
  • Type of oxidation: Wet Oxidation - up to 2000 nm and Dry oxidation up to 200 nm

Silicon wafers marking

  • Diameter of marked wafers: 100 mm, 150 mm, 200 mm;
  • Marking Type: according to Semi M13, Semi M12 or as per customer's requirements;
  • Marking fonts:
    Dot Matrix SEMI OCR 5x9 / 10x18 / 15x27
    Barcode SEMI BC 412, IBM 412
    2D Code SEMI T7
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