SOI wafer production

150, 200 mm
Wafer diameter

10 wafers
Minimal batch

Fast order execution

Silicon on insulator (SOI) wafer production

Manufacturing of SOI wafers is carried out with use of modern automated technological equipment providing high quality of final products. Monitoring of SOI structures parameters is performed at all stages of production cycle and final acceptance

THIN FILM SOI WAFERS
Wafer diameter: 150 mm, 200 mm
Technology: bonding of wafers and splitting by ion cut
Minimal batch: 10 wafers
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THICK FILM SOI WAFERS
Wafer diameter: 150 mm, 200 mm
Technology: bonding of wafers, grinding and polishing of donor wafer
Minimal batch: 10 wafers
More details

Download specification

Related Services

​Silicon wafers thinning by
grinding

  • Thinning of wafers with topology on the tape;
  • Wafer diameter: 100 mm, 150 mm, 200 mm;
  • Minimum wafer thickness after thinning: 130 µm, 150 µm, 200 µm;
  • Total thickness variation (TTV): < 3,0 µm;
  • Thickness variation (from wafer to wafer): < 3,0 µm

​​Grinding to improve the geometry of
silicon wafers​

  • Wafer diameter: 100 mm, 150 mm;
  • Total thickness variation (TTV): < 1,0 µm (100 mm); < 1,5 µm (150 mm);
  • Thickness variation (from wafer to wafer): < 3,0 µm

​Silicon wafers edge trimming​

  • Prevention of chips during grinding process;
  • Wafer diameter: 100 mm, 150 mm;
  • Bevel width up to 5 mm;
  • Bevel depth is determined by the thickness of the wafer after thinning

Measurement of silicon, saphire,
SOI and SOS wafers

  • Measurement of wafer geometry (BOW, WARP, thickness, flatness) by laser interferometry with an accuracy up to 0.1 µm;
  • Micro-roughness measurement by atomic force microscopy with resolution up to 0.05 nm;
  • Measurement of thicknesses of multilayer thin-film structures and optical characteristics (reflection, refraction and absorption coefficients) of semiconductor wafers by the method of spectral ellipsometry in the range of 1Å – 100 µm;
  • Measurement of electrophysical parameters of semiconductor wafers