Silicon on insulator wafers
› SOI production, under construction
Wafer diameter – 150 mm, 200 mm
- SOI wafers with thin layers for VLSI
Active layer thickness: 50 – 400 nm
Buried oxide layer thickness (thermal oxide): 100 – 400 nm
Technology: bonding of wafers and splitting by ion cut - SOI wafers with thick layers for MEMS and power devices
Active layer thickness: 5 – 100 µm
Buried oxide layer thickness up to 1 µm for thermal oxide and 3 µm for CVD oxide
Technology: grinding and polishing of donor wafer
› Thinning of silicon wafers by grinding
Diameters of wafers | 100 mm | 150 mm | 200 mm |
Minimal thickness of wafer after thinning | 130 µm | 150 µm | 200 µm |
TTV | < 1,5 µm | < 3,0 µm | |
WTW deviation | < 3 µm |
› Measurement of wafer parameters:
- Geometry parameters measurement (WARP, BOW, Thickness, flatness) by laser interferometry
• Diameters of wafers: 100 mm, 150 mm and 200 mm
• Accuracy: 0,1 µм
• Dynamic range of measurements: 30 µм - Roughness measurements by AFM
• Diameters of wafers: 100 mm, 150 mm and 200 mm
• Measurement range along Z: 7 µm
• Resolution along Z: 0,05 nm
• Measurement range along XY: 90 µm
• Resolution along XY: 0,5 nm - Thickness measurement of thin multylayer structures and optical characteristic (reflection, refraction and absorption coefficients) of semiconductor wafers by spectral ellipsometry
• Diameters of wafers: 100 mm, 150 mm and 200 mm
• Range of wavelength: 265 nm – 1700 nm
• Range of thicknesses: 1Å – 100 µm
• Ultimate thickness measurement accuracy (1σ): 0,25 Å - Resistivity measurement of semiconductor wafers by 4 point probe
• Diameters of wafers: 100 mm, 150 mm and 200 mm
• Range of measurements: from 1×10-3 up to 8×109 Om/□
• Relative error < 0.2 %
Flexible work with Customers:
- SOI production according to customer requirements:
• thickness and resistivity of active layer,
• thickness of buried oxide layer
• individual requirements for substrate and donor wafer
- Minimal batch: 10 SOI wafers
- Fast execution of orders
• thickness and resistivity of active layer,
• thickness of buried oxide layer
• individual requirements for substrate and donor wafer
- Minimal batch: 10 SOI wafers
- Fast execution of orders
E-mail address for obtaining detailed information on the said products and services:MNMineev@mvc-nn.ru
Contact person: Maksim Mineev – Manager of Division for developing technology and manufacturing SOI wafers