Development of non-volatile memory

Cooperation with leading foundry manufactures

Development and research of technological directions for the creation of non-volatile memory

Development and research of technological directions for the creation of energy-efficient storage devices based on alternative physical principles of information storage are carried out using modern technologies in cooperation with the world's leading manufacturers of integrated circuits. Developments are carried out throughout the entire design cycle: from the system level to topology development

FRAM
Memory devices based on ferroelectric thin films
MRAM
Memory devices based on magnetoresistive effects
ReRAM
Memory devices based on resistive switching
Traditional non-volatile memory Next-generation non-volatile memory
Type Flash FRAM MRAM ReRAM
Write/Read time 1 ms / 50 ns < 10 ns / 10 ns 10 ns / 10 ns 5 ns / 5 ns
Rewrite resource (cycles) 10 3 – 10 5 >10 9 >10 16 >10 10
Power consumption / bit ≤ 0,1 NJ 50 FJ 0,1 PJ 0,1 PJ

Next-generation non-volatile memory

Research

  • Research of electrophysical, morphological, structural, and other parameters of test structures containing storage elements manufactured in laboratory conditions within the framework of cooperation with leading domestic research teams

Modeling

  • Instrument and technological modeling;
  • Circuit modeling;
  • Verification of storage element models

Designing

  • Development of design solutions for the manufacture of energy-efficient memory chips in the foundry
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