Development and research of technological directions for the creation of energy-efficient storage devices based on alternative physical principles of information storage are carried out using modern technologies in cooperation with the world's leading manufacturers of integrated circuits. Developments are carried out throughout the entire design cycle: from the system level to topology development
Traditional non-volatile memory | Next-generation non-volatile memory | |||
Type | Flash | FRAM | MRAM | ReRAM |
Write/Read time | 1 ms / 50 ns | < 10 ns / 10 ns | 10 ns / 10 ns | 5 ns / 5 ns |
Rewrite resource (cycles) | 10 3 – 10 5 | >10 9 | >10 16 | >10 10 |
Power consumption / bit | ≤ 0,1 NJ | 50 FJ | 0,1 PJ | 0,1 PJ |