Silicon on insulator wafers

   › SOI production, under construction

 Wafer diameter – 150 mm, 200 mm

  1. SOI wafers with thin layers for VLSI

     Active layer thickness: 50 – 400 nm
     Buried oxide layer thickness (thermal oxide): 100 – 400 nm
     Technology: bonding of wafers and splitting by ion cut

  2. SOI wafers with thick layers for MEMS and power devices

     Active layer thickness: 5 – 100 µm
     Buried oxide layer thickness up to 1 µm for thermal oxide and 3 µm for CVD oxide
     Technology: grinding and polishing of donor wafer

   › Thinning of silicon wafers by grinding

Diameters of wafers 100 mm 150 mm 200 mm
Minimal thickness of wafer after thinning 130 µm 150 µm 200 µm
TTV < 1,5 µm < 3,0 µm
WTW deviation < 3 µm

   › Measurement of wafer parameters:

  1. Geometry parameters measurement (WARP, BOW, Thickness, flatness) by laser interferometry
     • Diameters of wafers: 100 mm, 150 mm and 200 mm
     • Accuracy: 0,1 µм
     • Dynamic range of measurements: 30 µм

  2. Roughness measurements by AFM

     • Diameters of wafers: 100 mm, 150 mm and 200 mm
     • Measurement range along Z: 7 µm
     • Resolution along Z: 0,05 nm
     • Measurement range along XY: 90 µm
     • Resolution along XY: 0,5 nm

  3. Thickness measurement of thin multylayer structures and optical characteristic (reflection, refraction and absorption coefficients) of semiconductor wafers by spectral ellipsometry

     • Diameters of wafers: 100 mm, 150 mm and 200 mm
     • Range of wavelength: 265 nm – 1700 nm
     • Range of thicknesses: 1Å – 100 µm
     • Ultimate thickness measurement accuracy (1σ): 0,25 Å

  4. Resistivity measurement of semiconductor wafers by 4 point probe

     • Diameters of wafers: 100 mm, 150 mm and 200 mm
     • Range of measurements: from 1×10-3 up to 8×109 Om/□
     • Relative error < 0.2 %

Flexible work with Customers:

 - SOI production according to customer requirements:
 • thickness and resistivity of active layer,
 • thickness of buried oxide layer
 • individual requirements for substrate and donor wafer
 - Minimal batch: 10 SOI wafers
 - Fast execution of orders

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E-mail address for obtaining detailed information on the said products and services:MNMineev@mvc-nn.ru

Contact person: Maksim Mineev – Manager of Division for developing technology and manufacturing SOI wafers